ds30448 rev. 1 - 2 1 of 3 2n7002v/va www.diodes.com diodes incorporated 2n7002v/va dual n-channel enhancement mode field effect transistor features dual n-channel mosfet low on-resistance low gate threshold voltage low input capacitance fast switching speed low input/output leakage ultra-small surface mount package lead free plating maximum ratings @ t a = 25 c unless otherwise specified characteristic symbol value units drain-source voltage v dss 60 v drain-gate voltage r gs 1.0m v dgr 60 v gate-source voltage (note 3) continuous pulsed v gss 20 40 v drain current (note 3) continuous i d 280 ma drain current (note 3) pulsed i dm 1.5 a total power dissipation p d 150 mw thermal resistance, junction to ambient r ja 833 c/w operating and storage temperature range t j ,t stg -55 to +150 c a m l b c h k g d kax ym mechanical data s 1 d 1 d 2 s 2 g 1 g 2 case: sot-563, molded plastic case material - ul flammability rating 94v-0 moisture sensitivity: level 1 per j-std-020a terminals: solderable per mil-std-202, method 208 terminals: finish - matte tin (note 2) solderable per mil-std-202, method 208 terminal connections: see diagram marking (see page 2): kas & kay ordering & date code information: see page 2 weight: 0.006 grams (approx.) sot-563 dim min max typ a 0.15 0.30 0.25 b 1.10 1.25 1.20 c 1.55 1.70 1.60 d 0.50 g 0.90 1.10 1.00 h 1.50 1.70 1.60 k 0.56 0.60 0.60 l 0.10 0.30 0.20 m 0.10 0.18 0.11 all dimensions in mm notes: 1. package is non-polarized. parts may be on reel in orientation illustrated, 180 rotated, or mixed (both ways). 2. if lead-bearing terminal plating is required, please contact your diodes inc. sales representative for avai lability and minimum order details. 3. device mounted on fr-4 pcb, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on diodes inc. suggested p ad layout document ap02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. t c u d o r p w e n 2n7002v (kas marking code) g 1 d 1 d 2 s 2 s 1 g 2 2n7002va (kay marking code) see note 1
ds30448 rev. 1 - 2 2 of 3 2n7002v/va www.diodes.com electrical characteristics @ t a = 25 c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 4) drain-source breakdown voltage bv dss 60 70 v v gs = 0v, i d = 10 a zero gate voltage drain current @ t c = 25c @ t c = 125c i dss 1.0 500 a v ds = 60v, v gs = 0v gate-body leakage i gss 100 na v gs = 20v, v ds = 0v on characteristics (note 4) gate threshold voltage v gs(th) 1.0 2.5 v v ds = v gs , i d = 250 a static drain-source on-resistance r ds (on) 2.0 3.5 3.0 5.0 v gs = 10v, i d = 0.5a v gs = 10v, i d = 0.5a, t j = 125c v gs = 5v, i d = 0.05a v gs = 5v, i d = 0.05a, t j = 125c on-state drain current i d(on) 0.5 1.0 a v gs = 10v, v ds = 7.5v forward transconductance g fs 80 ms v ds =10v, i d = 0.2a dynamic characteristics input capacitance c iss 50 pf v ds = 25v, v gs = 0v f = 1.0mhz output capacitance c oss 25 pf reverse transfer capacitance c rss 5.0 pf switching characteristics turn-on delay time t d(on) 20 ns v dd = 30v, i d = 0.2a, r l = 150 ,v gen = 10v, r gen = 25 turn-off delay time t d(off) 20 ns ordering information (note 5) device packaging shipping 2n7002v-7 sot-563 3000/tape & reel 2n7002va-7 sot-563 3000/tape & reel notes: 4. short duration test pulse used to minimize self-heating effect. 5. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. marking information kas = 2n7002v product type marking code (see note 1) ym = date code marking y = year ex: r = 2004 m = month ex: 9 = september date code key year 2004 2005 2006 2007 2008 2009 code r st u vw month jan feb march apr may jun jul aug sep oct nov dec code 1234567 89 o nd t c u d o r p w e n kas ym s 1 d 2 g 1 d 1 s 2 g 2 kay = 2n7002va product type marking code (see note 1) ym = date code marking y = year ex: r = 2004 m = month ex: 9 = september kay ym s 1 d 2 g 1 d 1 s 2 g 2
ds30448 rev. 1 - 2 3 of 3 2n7002v/va www.diodes.com -50 050100150 250 200 150 50 100 0 t , ambient temperature ( c) a fig. 1, derating curve - total p,p o wer dissipati o n (mw) d t c u d o r p w e n
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